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| STTH3010 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 30 A 1000 V 175 C 1.30 V 42 ns A K A K Features and benefits TO-220AC STTH3010D Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: - DOP3I Electrical insulation = 2500 VRMS Capacitance = 12 pF A K DO-247 STTH3010W K A DOP3I STTH3010PI Order codes Part Number STTH3010D STTH3010W STTH3010PI Marking STTH3010D STTH3010W STTH3010PI Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/10 www.st.com 10 Characteristics STTH3010 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values at 25 C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, = 0.5 Repetitive peak forward current TO-220 / DO-247 DOP3I tp = 5 s, F = 5 kHz square Tc = 105 C Tc = 65 C 300 180 -65 to + 175 175 A A C C Value 1000 50 30 Unit V A A Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Junction to case DOP3I 1.8 Parameter TO-220 / DO-247 Value 1.1 C/W Unit Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM Min. Typ Max. 15 A 10 100 2 IF = 30 A 1.4 1.3 1.8 1.7 V Unit VF (2) Forward voltage drop Tj = 100 C Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.013 IF2(RMS) 2/10 STTH3010 Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C Min. Typ Max. 100 53 42 24 1 450 5 ns V 70 55 32 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -200 A/s, VR = 30 V, Tj = 25 C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 30 A, dIF/dt = -200 A/s, VR = 600 V, Tj = 125 C IF = 30 A, dIF/dt = -200 A/s, VR = 600 V, Tj = 125 C dIF/dt = 100 A/s IF = 30 A VFR = 1.5 x VFmax, Tj = 25 C IF = 30 A, dIF/dt = 100 A/s, Tj = 25 C Figure 1. P(W) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 5 Conduction losses versus average current =0.2 =0.1 =0.05 =0.5 =1 Figure 2. IFM(A) 200 180 160 140 120 100 80 60 Forward voltage drop versus forward current Tj=150C (Maximum values) Tj=150C (Typical values) Tj=25C (Maximum values) T 40 IF(AV)(A) 10 15 20 25 30 35 40 20 0 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 3.0 3.5 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 Single pulse IRM(A) 60 50 40 30 20 10 IF=0.5 x IF(AV) VR=600V Tj=125C IF= 2 x IF(AV) IF= IF(AV) tp(s) 0 1.E-01 1.E+00 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 3/10 Characteristics STTH3010 Figure 5. trr(ns) 700 600 500 400 300 200 100 Reverse recovery time versus dIF/dt (typical values) VR=600V Tj=125C IF= 2 x IF(AV) Figure 6. Qrr(C) 7 6 5 VR=600V Tj=125C Reverse recovery charges versus dIF/dt (typical values) IF= 2 x IF(AV) IF= IF(AV) IF= IF(AV) 4 3 IF=0.5 x IF(AV) 2 IF=0.5 x IF(AV) 1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 7. Softness factor versus dIF/dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature S factor 1.50 IF = 2 x IF(AV) VR=600V Tj=125C 2.0 1.8 1.6 1.4 1.2 Sfactor IF = IF(AV) VR=600V Reference: Tj=125C 1.25 1.00 1.0 0.8 0.6 tRR 0.75 0.4 0.2 QRR IRM dIF/dt(A/s) 0.50 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 75 100 125 0.0 25 50 4/10 STTH3010 Characteristics Figure 9. VFP(V) 25 IF = IF(AV) Tj=125C Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) 800 700 600 500 IF = IF(AV) VFR = 1.5 x V F max. Tj=125C 20 15 10 400 5 300 dIF/dt(A/s) 0 0 100 200 300 400 500 200 0 100 200 dIF/dt(A/s) 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25C 100 VR(V) 10 1 10 100 1000 5/10 Package information STTH3010 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC) Recommended torque value: 0.80 Nm (SOD93, DOP31, and DO-247) Maximum torque value: 0.7 Nm (TO-220AC) Maximum torque value: 1.0 Nm (SOD93, DOP31, and DO-247) Table 5. DO-247 dimensions DIMENSIONS REF. Millimeters Min. A V Inches Min. 0.191 0.086 0.015 0.039 0.078 Max. 0.203 0.102 0.031 0.055 Max 5.15 2.60 0.80 1.40 2.00 4.85 2.20 0.40 1.00 D E Dia V F F2 A H F3 G H 2.00 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2.00 5 60 3.55 2.40 0.078 0.429 0.094 L5 L L2 L4 F2 L3 F3 V2 F G M E L1 D 15.75 0.608 20.15 0.781 4.30 0.145 0.728 14.80 0.559 1.362 0.216 3.00 0.078 5 60 3.65 0.139 0.620 0.793 0.169 L L1 L2 L3 L4 L5 M V V2 Dia. 0.582 0.118 0.143 6/10 STTH3010 Table 6. T0-220AC dimensions Package information DIMENSIONS REF. Millimeters Min. A H2 OI L5 C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 C D L7 E F F1 G L6 L2 F1 L9 L4 F D H2 L2 M E 16.40 typ. 13.00 2.65 15.25 6.20 3.50 14.00 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 L4 L5 L6 L7 L9 M Diam. I G 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 7/10 Package information Table 7. DOP3I dimensions STTH3010 DIMENSIONS REF. E R E1 OP c A Millimeters Min. Max. 4.60 1.40 1.55 0.70 13.10 15.50 7.75 11.30 21.10 15.60 4.17 2.90 Inches Min. 0.173 0.047 0.057 0.020 0.474 0.594 0.297 0.425 0.815 0.565 0.161 0.106 Max. 0.181 0.055 0.061 0.028 0.516 0.610 0.305 0.445 0.831 0.614 0.164 0.114 A b c c1 4.40 1.20 1.45 0.50 12.15 15.10 7.55 10.80 20.4 14.35 4.08 2.70 G D Y D E E1 L e G b Q e c1 L P Q R Y 4.60 typ. 15.80 16.50 0.181 typ. 0.622 0.650 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 STTH3010 Ordering information 3 Ordering information Part Number STTH3010D STTH3010PI STTH3010W Marking STTH3010D STTH3010PI STTH3010W Package TO-220AC DOP3I DO-247 Weight 1.86 g 4.46 g 4.4 g Base qty 50 30 30 Delivery mode Tube Tube Tube 4 Revision history Date 02-Mar-2006 Revision 1 First issue. Description of Changes 9/10 STTH3010 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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